ZXMN3G32DN8
Typical characteristics
Issue 1 - January 2008
? Zetex Semiconductors plc 2008
5
www.zetex.com
相关PDF资料
ZXMN4A06GTA MOSFET N-CH 40V 5A SOT223
ZXMN4A06KTC MOSFET N-CHAN 40V 10.9A DPAK
ZXMN6A07FTC MOSFET N-CHAN 60V SOT23-3
ZXMN6A07ZTA MOSFET N-CH 60V 1.9A SOT-89
ZXMN6A08E6TC MOSFET N-CH 60V 2.8A SOT23-6
ZXMN6A08GTA MOSFET N-CH 60V 3.8A SOT223
ZXMN6A08KTC MOSFET N-CH 60V 5.36A DPAK
ZXMN6A09DN8TA MOSFET 2N-CH 60V 5.1A 8-SOIC
相关代理商/技术参数
ZXMN4A06G 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN4A06GTA 功能描述:MOSFET 40V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN4A06GTC 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN4A06K 制造商:Diodes Incorporated 功能描述:MOSFET, N, D-PAK 制造商:DIODES 功能描述:MOSFET, N, D-PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:7.2 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 40V, 10.9A, DPAK, Transistor Polarity:N Channel, Continuous Drain Current Id:10.9A, Drain Source Voltage Vds:40V, On Resistance Rds(on):50mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1V, No. of Pins:3 , RoHS Compliant: Yes 制造商:Diodes Incorporated 功能描述:MOSFET, N, D-PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:7.2
ZXMN4A06KTC 功能描述:MOSFET 40V 10.9A N-CHANNEL MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN6A07F 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:60V SOT23 N-channel enhancement mode mosfet
ZXMN6A07F_07 制造商:ZETEX 制造商全称:ZETEX 功能描述:60V SOT23 N-channel enhancement mode mosfet
ZXMN6A07FTA 功能描述:MOSFET 60V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube